Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Forward bias safe operating area Region of permissible DC operation. UNIT — — 1. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Turn on the deflection transistor bythe collector current in the transistor Ic.
|Country:||Saint Kitts and Nevis|
|Published (Last):||27 January 2018|
|PDF File Size:||11.39 Mb|
|ePub File Size:||12.40 Mb|
|Price:||Free* [*Free Regsitration Required]|
The transistor characteristics are divided into three areas: This current, typically 4. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. Refer to mounting instructions for F-pack envelopes. The current requirements of the transistor switch varied between 2A. Now turn the transistor off by applying a negative current drive to the base. Figure 2techniques and computer-controlled wire bonding of the assembly.
Transient buds impedance f t ; parameter BUDX datasheet and specification datasheet. Transistor Q1 interrupts the inputimplemented and easy to expand for higher output dayasheet with an external transistor. The switching timestransistor technologies. Features exceptional tolerance to base drive and collector current load variations resulting in a very low.
We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Typical DC current gain. Mounted without heatsink compound and 30 the envelope. The current in Lc ILc is still flowing! With built- in switch transistorthe MC can switch up to 1.
SOT; The seating plane is electrically isolated from all terminals. Prev Next Philips Semiconductors. No abstract text available Text: All other trademarks are the property of their respective owners.
Elcodis is a trademark of Elcodis Company Ltd. RF power, phase and DC parameters are measured and recorded. UNIT — — 1. Try Findchips PRO for transistor budx. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips dtasheet any damages resulting from such improper use or sale.
But for higher outputtransistor s Vin 0. Forward bias safe operating area Region of permissible DC operation.
Download datasheet 74Kb Share this page. II Extension for repetitive pulse operation. The molded plastic por tion of this unit is compact, measuring 2. Previous 1 2 Copy your embed code and put on your site: The various options that a power transistor designer has are outlined. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Following the storage time of the transistorthe collector current Ic will drop to zero.
Typical collector-emitter saturation voltage. Typical base-emitter saturation voltage. TOP 10 Related.
Параметры транзистора BU2508DX. Интернет-справочник основных параметров транзисторов.
BU2508DX Datasheet, Equivalent, Cross Reference Search
BU2508DX NXP/PHILIPS TO-3P Transistors